High power and high efficiency vertical cavity surface emitting GaAs laser

Sun, D.C.; Friberg, S.R.
September 1992
Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1502
Academic Journal
Examines the operation of a vertical cavity surface emitting gallium arsenide laser in an external cavity. Generation of an absolute quantum efficiency; Increase in local temperature at the lasing position; Alteration of the threshold pump and maximum output powers by increasing heat sink temperature.


Related Articles

  • 850-nm diode lasers based on AlGaAsP/GaAs heterostructures. Vinokurov, D.; Kapitonov, V.; Lyutetskiy, A.; Nikolaev, D.; Pikhtin, N.; Slipchenko, S.; Stankevich, A.; Shamakhov, V.; Vavilova, L.; Tarasov, I. // Semiconductors;Oct2012, Vol. 46 Issue 10, p1321 

    Laser heterostructures with waveguides and emitter layers made of AlGaAs and AlGaAsP alloys are grown by hydride metal-organic vapor-phase epitaxy on a GaAs substrate and studied. It was shown that the heterostructure containing AlGaAsP layers has a large curvature radius in comparison with the...

  • Thermally stable operation of a bistable Fabry-Perot etalon with a bulk GaAs spacer. Acklin, B.; Bagnoud, C. // Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3099 

    Demonstrates a thermally stable latched operation of a nonlinear Fabry-Perot device through the gallium arsenide substrate heat sinking. Reflectivity rates of integrated dielectric mirrors; Measurement of the threshold dependence on the size of the excited spots; Evidence of carrier diffusion...

  • Monolithic GaAs/AlAs optical bistable étalons with improved switching characteristics. Kuszelewicz, R.; Oudar, J. L.; Michel, J. C.; Azoulay, R. // Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2138 

    Compact bistable GaAs étalons with epitaxial GaAs/AlAs Bragg reflectors have been fabricated by metallorganic vapor phase epitaxy. Their monolithic structure is convenient for further technological steps. It has been found that the good thermal conductivity of the mirror layers allows more...

  • Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers. Zory, P. S.; Reisinger, A. R.; Waters, R. G.; Mawst, L. J.; Zmudzinski, C. A.; Emanuel, M. A.; Givens, M. E.; Coleman, J. J. // Applied Physics Letters;7/7/1986, Vol. 49 Issue 1, p16 

    Thermally induced threshold wavelength shifts of 50 nm have been observed in short cavity length diode lasers fabricated from thin quantum well AlGaAs. Analysis suggests that the high-energy radiation is generated by transitions between the n=2 level in the conduction band and the n=2 heavy hole...

  • InGaAsP/InP inverted rib waveguide lasers emitting at 1.54 μm. van der Ziel, J. P.; Logan, R. A.; Nordland, W. A.; Kazarinov, R. F. // Journal of Applied Physics;3/1/1985, Vol. 57 Issue 5, p1759 

    Describes indium-gallium-arsenic-phosphorus inverted rib waveguide lasers with pulsed current thresholds. Range of the material growth; Light-current characteristics; Light output versus pulsed current dependence at several heat sink temperatures.

  • Continuous-wave operation of a 5.2 μm quantum-cascade laser up to 210 K. Ishaug, Brian; Hwang, Wen-Yen; Um, Jae; Guo, Bujin; Lee, Hao; Lin, Chih-Hsiang // Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1745 

    Continuous-wave operation of a 5.2 μm-type I quantum-cascade laser with more than 5 mW of output power is reported at a heat sink temperature of 210 K (-63 °C). This temperature is within the range obtainable with thermal-electric coolers. The device was mounted epi-side down on a copper...

  • Diamond heat sinking of terahertz antennas for continuous-wave photomixing. Ackemann, T.; Alduraibi, M.; Campbell, S.; Keatings, S.; Luke Sam, P.; Fraser, H.; Arnold, A. S.; Riis, E.; Missous, M. // Journal of Applied Physics;12/15/2012, Vol. 112 Issue 12, p123109 

    The generation of cw Terahertz radiation from photomixing in low-temperature grown GaAs is limited by the thermal load for single emitters. We propose a new heat sinking scheme based on high thermal conductivity, transparent crystalline heat spreaders as diamond in direct contact with the active...

  • CHP Efficiency of a 2000 × CPV System with Reflective Optics. Bonsignore, Gaetano; Gallitto, Aurelio Agliolo; Agnello, Simonpietro; Barbera, Marco; Gelardi, Franco M.; Sciortino, Luisa; Collura, Alfonso; Cicero, Ugo Lo; Milone, Sergio; Montagnino, Fabio M.; Paredes, Filippo; Cannas, Marco // AIP Conference Proceedings;2015, Vol. 1679 Issue 1, p1 

    In this work we have developed a combined heat and power (CHP) prototype that operates at 2000 × concentration based on reflective optics. The receiver consists of a InGaP/InGaAs/Ge triple-junction solar cell in thermal contact with an aluminium heat sink driving a forced water flow. This...

  • Unstable resonator cavity semiconductor lasers. Salzman, J.; Venkatesan, T.; Lang, R.; Mittelstein, M.; Yariv, A. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p218 

    GaAs heterostructure lasers with unstable resonator cavities were demonstrated for the first time with both curved mirrors fabricated by etching. Typical output powers of 0.35 W were observed in a stable, highly coherent lateral mode. The laser operated stably in a single longitudinal mode over...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics