TITLE

Measurement of fast surface photovoltage relaxation

AUTHOR(S)
Hlavka, J.; Svehla, R.
PUB. DATE
July 1996
SOURCE
Review of Scientific Instruments;Jul96, Vol. 67 Issue 7, p2588
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a version of the measuring circuit which allows for the measurement of fast surface photovoltage relaxation in a simple way. Analysis of the measuring circuit; Components of the apparatus.
ACCESSION #
4271718

 

Related Articles

  • In situ stress measurement apparatus for liquid applied coatings. Payne, Jason A.; McCormik, Alon V.; Francis, Lorraine F. // Review of Scientific Instruments;Dec1997, Vol. 68 Issue 12, p4564 

    Describes an apparatus for measuring stress development in polymer and ceramic coatings. Combination of the coating, processing and stress measurement steps; Study on the effects of processing variables; Report on the results for polyisobutyl methacrylate.

  • Surface and Volume Resistivity Meter.  // Physics Today;Oct90, Vol. 43 Issue 10, p106 

    Reviews the Hiresta IP, a direct-reading line of high-resistance surface and volume-resistivity meters from Optical Associates.

  • Device for measuring the force and separation between two surfaces down to molecular separations. Parker, J. L.; Christenson, H. K.; Ninham, B. W. // Review of Scientific Instruments;Oct89, Vol. 60 Issue 10, p3135 

    We present an apparatus for measuring the force as a function of distance between surfaces at separations down to the order of molecular dimensions. The device is a simplified yet improved version of the surface force apparatus first developed by Israelachvili and Adams [J. Chem. Soc. Faraday...

  • New Materials and Components Mandelis, Andreas // Review of Scientific Instruments;Oct98, Vol. 69 Issue 10, p3711 

    Provides updates on the measurement of the physical properties of scientific materials. Application of pressure-sensitive paints to measure pressure fields in high-speed flows; Offer of a full-line of sample preparation accessories by Spectra-Tech; Launch of 350 W Temperature Controller by...

  • New experimental technique for simultaneously measuring thermal conductivity and heat capacity. Huang, C. C.; Viner, J. M.; Novack, J. C. // Review of Scientific Instruments;Jul1985, Vol. 56 Issue 7, p1390 

    A new technique for simultaneously measuring the thermal conductivity and heat capacity of any thin sample is described. Extensive measurements on microscope cover glass slides and on one liquid-crystal compound have been carried out. The results are in good agreement with reported values.

  • Self-balanced bridge for automatic measurements of magnetic susceptibilities. Ocio, M.; Hammann, J. // Review of Scientific Instruments;Jul1985, Vol. 56 Issue 7, p1367 

    An automatic bridge for low-temperature measurements of susceptibilities χ(0), χ', and χ' as a function of field and temperature is described. The system is based on a digitally controlled feedback loop which ensures continuous balanced operation, in phase as well as in quadrature....

  • Multispecies coherent anti-Stokes Raman scattering instrument for turbulent combustion. Antcliff, Richard R.; Jarrett, Olin // Review of Scientific Instruments;Nov87, Vol. 58 Issue 11, p2075 

    A nonintrusive diagnostic system is described which permits simultaneous measurement of temperature, nitrogen number density, and oxygen number density in hostile combustion environments. This system is pumped by a 10-Hz neodymium YAG laser, and signals are detected with an intensified...

  • Direct temperature monitoring for semiconductors in plasma immersion ion implantation. Tian, Xiubo; Xiubo Tian; Chu, Paul K. // Review of Scientific Instruments;Jul2000, Vol. 71 Issue 7 

    In situ temperature monitoring is extremely important in plasma immersion ion implantation (PIII) of semiconductors. For instance, the silicon wafer must be heated to 600 °C or higher in separation by plasma implantation of oxygen, and in the PIII/ion-cut process, the wafer temperature must...

  • Measurement of partial pressures in extremely high vacuum region using a modified residual gas... Watanabe, Shu; Oyama, Hitoshi; Kato, Shigeki; Aono, Masakazu // Review of Scientific Instruments;Mar99, Vol. 70 Issue 3, p1880 

    Explores problems concerning the measurement of partial pressures using a residual gas analyzer (RGA) in an extremely high vacuum (XHV) region. Influence of electron stimulated desorption ions; Outgassing rate from the ion source of the RGA; Modification of a commercial RGA.

Share

Read the Article

Courtesy of

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics