TITLE

Photochemistry of dimethylcadmium on compound semiconductor surfaces

AUTHOR(S)
Lasky, P.J.; Lu, P.H.; Khan, K.A.; Slater, D.A.; Osgood Jr., R.M.
PUB. DATE
April 1997
SOURCE
Journal of Chemical Physics;4/22/1997, Vol. 106 Issue 16, p6552
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents dynamical studies of the surface photochemistry of dimethylcadmium (DMcd) adsorbed on GaAs(110) and CdTe(110) surfaces. Thermal chemistry of DMCd on CdTe(110) and GaAs(110); Photochemistry of DMCd on CdTe(110) and GaAs(110).
ACCESSION #
4266759

 

Related Articles

  • Growth of (111) CdTe on tilted (001) GaAs. Cibert, J.; Gobil, Y.; Saminadayar, K.; Tatarenko, S.; Chami, A.; Feuillet, G.; Dang, Le Si; Ligeon, E. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p828 

    Twin-free growth of (111) CdTe on (001) GaAs is reported for substrates tilted around the [110] axis, i.e., exposing Ga dangling bonds at the terrace edges. Layers grown on nominally (001) substrates and tilted substrates are characterized by double crystal x-ray diffraction, low-temperature...

  • Elastic strains in CdTe-GaAs heterostructures grown by metalorganic chemical vapor deposition. Olego, D. J.; Petruzzello, J.; Ghandhi, S. K.; Taskar, N. R.; Bhat, I. B. // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p127 

    The elastic response associated with the lattice mismatch in (100)CdTe||(100)GaAs heterostructures was investigated by performing photoluminescence measurements as a function of CdTe layer thicknesses. The heterostructures were grown by metalorganic chemical vapor deposition. Estimates of...

  • Band gap energy and exciton peak of cubic CdS/GaAs epilayers. Yu, Young-Moon; Kim, Kwan-mo; O, Byungsung; Lee, Ki-Seon; Choi, Yong Dae; Yu, Pyeong Yeol // Journal of Applied Physics;7/15/2002, Vol. 92 Issue 2, p1162 

    Cubic zinc blende CdS epilayers were grown on (100) GaAs substrates by hot-wall epitaxy. The lattice constant of cubic CdS was measured by x-ray diffraction and it was found that the compressive strain remained in the CdS films. Photoluminescence (PL) measurement showed the free exciton emission...

  • Low-temperature photoluminescence from CdTe grown by hot-wall epitaxy on GaAs. Lischka, K.; Schmidt, T.; Pesek, A.; Sitter, H. // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1220 

    The low-temperature near-band-edge photoluminescence of thick (d≊36 μm) (100)CdTe epilayers grown on (100)GaAs substrates is investigated. Besides a dominating bound exciton emission, evidence for free-exciton emission (n=1 and 2) and two electron transitions (TETs) of donor-bound...

  • X-ray photoelectron spectroscopy studies of initial growth mechanism of CdTe layers grown on (100)GaAs by organometallic vapor phase epitaxy. Sone, Syuji; Ekawa, Mitsuru; Yasuda, Kazuhito; Sugiura, Yoshiyuki; Saji, Manabu; Tanaka, Akikazu // Applied Physics Letters;2/5/1990, Vol. 56 Issue 6, p539 

    Variations of the GaAs surface conditions and the adsorption of the precursor elements of Cd and Te on the (100)GaAs substrate were studied by x-ray photoelectron spectroscopy at the initial stage of CdTe growth by organometallic vapor phase epitaxy. The stoichiometry of GaAs substrates was...

  • Electronic properties in Ga-doped CdTe layers grown by metalorganic vapor phase epitaxy. Ekawa, Mitsuru; Yasuda, Kazuhito; Ferid, Touati; Saji, Manabu; Tanaka, Akikazu // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3406 

    Presents a study which examined electronic properties in gallium-doped (100) cadmium telluride layers on (100) gallium arsenide grown by atmospheric pressure metalorganic vapor phase epitaxy. Effects of diethyltelluride/dimethylcadmium ratio on electrical properties; Measurement of electron...

  • Photoluminescence in CdTe grown on GaAs by metalorganic chemical vapor deposition. Wang, C. H.; Cheng, K. Y.; Yang, S. J. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p962 

    Epitaxial layers of CdTe grown on (100) GaAs substrates by metalorganic chemical vapor deposition at temperatures between 320 and 410 °C were investigated by photoluminescent measurements at 14 K. The sharp bound exciton-related peak at 1.594 eV, the band-edge emission located near 1.557 eV,...

  • Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100). Reno, J. L.; Gourley, P. L.; Monfroy, G.; Faurie, J. P. // Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1747 

    CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x-ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown on GaAs (100) misoriented 2° towards the [110]...

  • Development of Nuclear Radiation Detectors Based on Epitaxially Grown Thick CdTe Layers on n+-GaAs Substrates. Niraula, M.; Yasuda, K.; Takagi, K.; Kusama, H.; Tominaga, M.; Yamamoto, Y.; Agata, Y.; Suzuki, K. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p815 

    A CdTe/n+-GaAs heterojunction diode for a room-temperature nuclear radiation detector has been developed and demonstrated. The heterojunction diode was fabricated by growing a 2-5-µm-thick iodine-doped n-CdTe buffer layer on the n+-GaAs substrates, followed by about 100-µm-thick undoped...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics