TITLE

Comparison of trimethylgallium and triethylgallium for the growth of GaN

AUTHOR(S)
Saxler, A.; Walker, D.
PUB. DATE
December 1997
SOURCE
Applied Physics Letters;12/1/1997, Vol. 71 Issue 22, p3272
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compares gallium nitride (GaN) films grown by low-pressure chemical vapor deposition using trimethylgallium and triethylgallium (TEGa). Characterization of the films; Exhibition of superior electrical and optical properties by GaN layers grown using TEGa; Display of near-bandedge photoluminescence of the films.
ACCESSION #
4266689

 

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