Growth of InSb using tris(dimethylamino)antimony and trimethylindium

Baucom, K.C.; Biefeld, R.M.
May 1994
Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p3021
Academic Journal
Examines the growth of InSb using tris(dimethylamino)antimony and trimethylindium (TMIn). Development of epitaxial InSb layers on p[sup -]-InSb substrates by metalorganic chemical vapor deposition; Evaluation of growth temperature and pressures; Proportionality of the growth rate to the TMIn flow at all temperatures.


Related Articles

  • p-n junction formation in InSb and InAs1-xSbx by metalorganic chemical vapor deposition. Chiang, P. K.; Bedair, S. M. // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p383 

    p-n junctions have been fabricated in InSb and InAs[sub 1-x] Sb[sub x] (0.4 < x < 0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the...

  • Tertiarybutyldimethylantimony: A new Sb source for low-temperature organometallic vapor phase.... Chen, C.H.; Stringfellow, G.B. // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p204 

    Investigates tertiarybutyldimethylantimony as a source for low-temperature organometallic vapor phase epitaxial growth of indium antimonide (InSB). Extraction of good surface morphology InSb layers; Efficiency of InSB growth; Presence of a negligible parasitic reaction between trimethylindium...

  • Epitaxial growth of InSb (111) on sapphire (0001). Jamison, K. D.; Bensaoula, A.; Ignatiev, A.; Huang, C. F.; Chan, W. S. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1916 

    Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, transmission electron microscopy, and scanning electron microscopy data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire,...

  • Molecular-beam epitaxy of (100) InSb for CdTe/InSb device applications. Williams, G. M.; Whitehouse, C. R.; Martin, T.; Chew, N. G.; Cullis, A. G.; Ashley, T.; Sykes, D. E.; Mackey, K.; Williams, R. H. // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1526 

    Presents a study which examined the molecular-beam epitaxy of (100) indium antimonide for the fabrication of cadium telleride/indium antimonide multilayer structures. Experimental details; Experimental results; Details of cross-sectional transmission analysis.

  • Molecular beam epitaxial growth and characterization of InSb on Si. Chyi, J.-I.; Biswas, D.; Iyer, S. V.; Kumar, N. S.; Morkoç, H.; Bean, R.; Zanio, K.; Lee, H.-Y.; Chen, Haydn // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1016 

    Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×1016 and...

  • Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy. Sa´nchez-Royo, J. F.; Segura, A.; Lang, O.; Schaar, E.; Pettenkofer, C.; Jaegermann, W.; Roa, L.; Chevy, A. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by...

  • Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy. Williams, G. M.; Whitehouse, C. R.; McConville, C. F.; Cullis, A. G.; Ashley, T.; Courtney, S. J.; Elliott, C. T. // Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1189 

    Molecular beam epitaxy has been used to grow thin (0.5 μm

  • The use of triisopropylantimony for the growth of InSb and GaSb. Chen, C. H.; Fang, Z. M.; Stringfellow, G. B.; Gedridge, R. W. // Journal of Applied Physics;6/1/1991, Vol. 69 Issue 11, p7605 

    Presents a study which examined the use of antimony source, triisopropylantimony (TIPSb), to grow indium antimonide and gallium antimonide epilayers by atmospheric pressure organometallic vapor phase epitaxy. Reactions between TIPSb and trimethylgallium; Advantage of TIPSb; Electron...

  • Growth of CdTe on InSb by organometallic vapor phase epitaxy. Ghandhi, S. K.; Bhat, I. // Applied Physics Letters;1984, Vol. 45 Issue 6, p678 

    Organometallic vapor phase epitaxy of CdTe on InSb substrates is described in this letter. It is shown that high quality CdTe layers can be grown on InSb substrates by this process. Growths under various temperatures and reactant partial pressures are described. Growth under excess...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics