Very long-wavelength GaAs/Al[sub x]Ga[sub 1-x]As infrared hot electron transistor

Gunapala, S.D.; Park, J.S.
May 1994
Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p3003
Academic Journal
Demonstrates a bound-to-continuum state GaAs/Al[sub x]Ga[sub 1-x]As infrared hot electron transistor. Obtainment of excellent and very low dark photocurrent transfer ratio; Description of the GaAs-based quantum well infrared photodetectors; Composition of the conduction electrons carrying the tunneling current components.


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