Effect of carbonization on the growth of 3C-SiC on Si (111) by silacyclobutane

Yuan, C.; Steckl, A.J.
May 1994
Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p3000
Academic Journal
Examines the effect of carbonization on the growth of 3C-SiC on silicon (Si) (111) by silacyclobutane. Application of chemical vapor deposition on propane carbonized and Si substrates; Determination of film crystallinity by transmission electron and x-ray diffraction; Creation of voids in the Si by the carbonization process.


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