Band discontinuity of strained-layer GaInAs/GaInAsP heterostructures

Queisser, I.; Harle, V.
May 1994
Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p2991
Academic Journal
Examines the performance of low temperature photoluminescence excitation and photocurrent measurements on strained GaInAs quantum-well layers. Identification of excitonic transitions in strained and unstrained samples; Determination of the effective masses and band offsets of the heterojunction; Excitation of the photoluminescence.


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