TITLE

Depth distribution of reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

AUTHOR(S)
Agarwala, Sambhu; Adesida, Ilesanmi
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p2979
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the depth distribution of defect inductive reactive ion etching in InAlAs/InGaAs heterostructures. Determination of defects by measurement of low-temperature mobilities; Evidence of the exponentiality of the defect distribution; Implication of the exponential distribution defects for defect production mechanism.
ACCESSION #
4266638

 

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