Depth distribution of reactive ion etching-induced damage in InAlAs/InGaAs heterostructures

Agarwala, Sambhu; Adesida, Ilesanmi
May 1994
Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p2979
Academic Journal
Examines the depth distribution of defect inductive reactive ion etching in InAlAs/InGaAs heterostructures. Determination of defects by measurement of low-temperature mobilities; Evidence of the exponentiality of the defect distribution; Implication of the exponential distribution defects for defect production mechanism.


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