Smoothing effect of GaAs/Al[sub x]Ga[sub 1-x]As superlattices grown by metalorganic vapor phase

Xian'gang Xu; Baibiao Huang
May 1994
Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p2949
Academic Journal
Examines the smoothing effect of gallium arsenide/Al[sub x]Ga[sub 1-x]As superlattices grown by metalorganic vapor phase epitaxy. Verification of the initial nucleation stage of the substrates; Effect of quantum heterostructures on electron and hole subband energy level adjustment; Attribution of smoothing mechanism to gallium and aluminum migrations.


Related Articles

  • High field transport in an edge overgrown lateral superlattice. Kurdak, C.; Zaslavsky, A. // Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p323 

    Examines I-V characteristics of lateral superlattice devices fabricated by the liquid phase epitaxial (LPE) overgrowth technique. Specification of cleaved edge overgrowth technique; Distinction of LPE behavior from bulk superlattice devices; Observation of a decreased current at high electric...

  • Orientationally independent antiferromagnetic coupling in epitaxial Fe/Cr (211) and (100) superlattices. Fullerton, Eric E.; Conover, M. J.; Mattson, J. E.; Sowers, C. H.; Bader, S. D. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6461 

    Presents the structural and magnetic characterization of epitaxial Fe/Cr(211) and Fe/Cr(100) superlattices. Procedure for preparing Fe/Cr superlattices; Saturation fields measured for the superlattices; Conclusion.

  • Effect of substrate temperature and V/III flux ratio on In incorporation for InGan/GaN... O'Steen, M.L.; Fedler, F. // Applied Physics Letters;10/11/1999, Vol. 75 Issue 15, p2280 

    Studies the effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN superlattice test samples grown by plasma-assisted molecular beam epitaxy. Plasma-assisted molecular beam epitaxial growth factors; Dependence of average alloy composition on substrate growth...

  • Fast time response from Si–SiGe undulating layer superlattices. Buca, D.; Winnerl, S.; Lenk, S.; Buchal, Ch.; Xu, D.-X. // Applied Physics Letters;6/3/2002, Vol. 80 Issue 22, p4172 

    We have grown Si-Si[sub 1-χ]Ge[sub χ] undulating layer superlattices withχ=0.39 and 0.45 by molecular-beam epitaxy on top of epitaxial implanted CoSi[sub 2] layers and fabricated vertical metal-semiconductor-metal detectors. The detectors show a quantum efficiency of 5% for the...

  • (100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAs. Kolodziejski, L. A.; Gunshor, R. L.; Otsuka, N.; Zhang, X.-C.; Chang, S.-K.; Nurmikko, A. V. // Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p882 

    This letter reports the first growth of (100) CdTe-CdMnTe superlattices. In the past (111) superlattices of CdTe-CdMnTe were grown on (100) GaAs substrates. To consistently achieve the desired (100) epitaxy, three different growth techniques are described. Reflection high-energy electron...

  • Semimetallic Hall properties of PbTe-SnTe superlattice. Ishida, A.; Aoki, M.; Fujiyasu, H. // Journal of Applied Physics;9/1/1985, Vol. 58 Issue 5, p1901 

    Presents a study that prepared the PbTe-SnTe superlattice by hot wall epitaxy to ascertain the type-II superlattice structure. Magnetic-field-dependent and relatively small Hall coefficients for the superlattices; Variations of the PbSnTe band edge energies with tin composition; Dependence of...

  • Lattice constant variation and complex formation in zincblende gallium manganese arsenide. Schott, G. M.; Faschinger, W.; Molenkamp, L. W. // Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1807 

    We perform high resolution x-ray diffraction on GaMnAs mixed crystals as well as on GaMnAs/GaAs and GaAs/MnAs superlattices for samples grown by low-temperature molecular-beam epitaxy under different growth conditions. Although all samples are of high crystalline quality and show narrow rocking...

  • Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and... Hartmann, J.M.; Kany, F. // Journal of Applied Physics;10/15/1998, Vol. 84 Issue 8, p4300 

    Highlights a study which used atomic layer epitaxy (ALE) growth modes to compare the deposition of CdTe/MnTe superlattices. In-depth look at semiconductor heterostructures; Composition of ALE; Structure of the superlattices; Methodology used to conduct the study; Results of the study.

  • Epitaxy and line tension. Mederos, L.; Quintana, A.; Navascués, G. // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p559 

    Discusses the concept of epitaxy and the line tension concept. Approaches used to explain experimental results of the preferential epitaxial nucleation; Ways in which the line tension modifies the impingement flux-temperature diagram of preferential nucleation; Nucleation rate expression.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics