Electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys

Unold, Thomas; Cohen, J. David
March 1994
Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1714
Academic Journal
Investigates the electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys. Consistency of the Urbach tail slope over the alloy range; Evidence of a lattice relaxation of the shallower unoccupied defect band; Relation between the total density of deep defects and germanium content.


Related Articles

  • Impedance spectroscopy of Ba3Sr2DyTi3V7O30 ceramic. Sahoo, P. S.; Panigrahi, A.; Patri, S. K.; Choudhary, R. N. P. // Bulletin of Materials Science;2010, Vol. 33 Issue 2, p129 

    Polycrystalline sample of Ba3Sr2DyTi3V7O30 was prepared at 950�C using a high-temperature solid-state reaction technique. X-ray structural analysis indicated the formation of a single-phase orthorhombic structure with lattice parameters: a = 12�2719 (39) �, b = 8�9715(39)...

  • Magnetoelectric relaxation in rhombohedral LiNbO3-CoFe2O4. Han, Yemei; Liu, Yueying; Zavalij, Peter; Salamanca-Riba, Lourdes; Cantando, Elizabeth; Bergstrom, Richard; Li, Lingxia; Wuttig, Manfred // Applied Physics Letters;6/25/2012, Vol. 100 Issue 26, p262907 

    We demonstrate a magnetoelectric nanocomposite, LiNbO3-CoFe2O4 (LNO-CFO), consisting of rhombohedral R3c LNO and R3m CFO phases. It is characterized by a maximum inverse magnetoelectric coefficient of 6.5 Oe cm·V-1 measured in a 106 V/m electric field, and a magnetic field dependent...

  • Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions. Izhnin, I.; Savitskii, G.; Fitsych, E.; Dvoretsky, S.; Mikhailov, N.; Varavin, V.; Mynbaev, K. // Technical Physics Letters;Jan2013, Vol. 39 Issue 1, p16 

    We have studied the relaxation of electrical properties in radiation-damaged layers formed during ion-beam milling (IBM) of cadmium mercury telluride (CdHgTe) solid solutions. It is established that the initial concentration of donor centers formed due to radiation-induced defects and the...

  • Electrical Response of Cement-Based Piezoelectric Ceramic Composites under Mechanical Loadings. Biqin Dong; Feng Xing; Zongjin Li // Smart Materials Research;2011, p1 

    Electrical responses of cement-based piezoelectric ceramic composites under mechanical loadings are studied. A simple high order model is presented to explain the nonlinear phenomena, which is found in the electrical response of the composites under large mechanical loadings. For general...

  • Thermoelectric characteristics of SiGe nanowire arrays as a function of Ge concentration. Li, C. B.; Xu, B.; Durrani, Z. A. K.; Mironov, M.; Fobelets, K. // AIP Conference Proceedings;6/26/2012, Vol. 1449 Issue 1, p417 

    The Seebeck coefficient and thermal conductivity of arrays of relaxed SiGe NWs on Si substrates are measured via a comparative technique. The measurements show that the SiGe containing NWs exhibit higher Seebeck coefficient than the bulk material. The longer SiGe NW array gives a higher Seebeck...

  • Thermodynamic stability of a bi-layer of copper nitride on Cu(100) surface. Pushpa, Raghani; Williamson, Izaak; Jones, Barbara // Journal of Chemical Physics;8/28/2011, Vol. 135 Issue 8, p084705 

    Ultrathin insulating films composed of a few atomic layers are being extensively used for controlling the electronic coupling of nanostructures deposited on a substrate. Ultrathin film, for example, a single layer of Cu2N deposited on a Cu(100) surface (known as Cu2N/Cu(100) surface) has been...

  • Surface Relaxation and Electronic States of Pt(111) Surface with Varying Slab Thickness. Kaushal, Ashok K.; Mullick, Shanta; Ahluwalia, P. K. // AIP Conference Proceedings;7/16/2011, Vol. 1349 Issue 1, p693 

    Surface relaxation and electronic DOS's of Pt(111) surface have been studied with varying slab thickness using ab-initio SIESTA method. We found the expansion in the top layer and contraction in the subsurface layers of Pt(111) surface. Our results match with the experimental results. Also...

  • Monte Carlo simulation study of spin transport in trilayer graphene: A comparison between ABA and ABC stacking. Ghosh, Bahniman; Misra, Soumya // Journal of Applied Physics;Oct2012, Vol. 112 Issue 7, p073720 

    In this work, we have used semi-classical Monte Carlo simulations to model spin transport in trilayer graphene (TLG) with ABA as well as ABC stacking. We have taken into consideration both the D'yakonov-Perel (DP) and Elliot-Yafet (EY) mechanisms of spin relaxation for modeling purposes. The two...

  • Calculation of the vibrational contribution to electronic properties. Kirtman, Bernard // AIP Conference Proceedings;Dec2012, Vol. 1504 Issue 1, p50 

    Apart from zero-point averaging, there are vibrational contributions to second- and higher-order 'electronic' properties that can be related to the shift in equilibrium geometry induced by a perturbing field. These contributions often exceed the pure electronic term in systems of technological...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics