TITLE

Electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys

AUTHOR(S)
Unold, Thomas; Cohen, J. David
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1714
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys. Consistency of the Urbach tail slope over the alloy range; Evidence of a lattice relaxation of the shallower unoccupied defect band; Relation between the total density of deep defects and germanium content.
ACCESSION #
4266614

 

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