Strained In[sub 0.40]Al[sub 0.60]As window layers for indium phosphide solar cells

Jain, R.K.; Landis, G.A.
March 1994
Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1708
Academic Journal
Calculates the performance of indium phosphide (InP) solar cells with a strained In[sub 0.40]Al[sub 0.60]As window layers. Potential for indium aluminum arsenide layers as a window layer material; Improvement in cell efficiency of p[sup +]n InP cells; Sensitivity of the calculations to the absorption coefficient.


Related Articles

  • High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD. Lantratov, V.; Kalyuzhnyĭ, N.; Mintairov, S.; Timoshina, N.; Shvarts, M.; Andreev, V. // Semiconductors;Jun2007, Vol. 41 Issue 6, p727 

    Monolithic dual-junction GaInP/GaAs solar cells grown by the MOCVD method were studied. The conditions of the growth of ternary Ga x In1− x P and Al x In1− x P alloys lattice-matched to GaAs are optimized. Technology for fabrication of a tunneling diode with a high peak current...

  • Diffusion length variation and proton damage coefficients for InP/InxGa1-xAs/GaAs solar cells. Jain, R. K.; Weinberg, I.; Flood, D. J. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2948 

    Reveals that indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide and silicon solar cells. Preparation of InP cells; Purpose of computer simulations using the PC-1D numerical code; Effect of fluence on cell efficiency for protons.

  • High efficiency homojunction InP solar cells. Yamamoto, Akio; Yamaguchi, Masafumi; Uemura, Chikao // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p975 

    Homojunction InP solar cells with a high conversion efficiency of 18.0% have been fabricated using thermal diffusion of sulphur into p-type InP. An open-circuit voltage Voc as high as 0.837 V which resulted from a reduction in leakage current was attained by employing mesa etching as a method...

  • Calculated performance of p[sup +]n InP solar cells with In[sub 0.52]Al[sub 0.48]As window layers. Jain, R.K.; Landis, G.A. // Applied Physics Letters;11/11/1991, Vol. 59 Issue 20, p2555 

    Calculates the performance of indium phosphide solar cells with In[sub 0.52]Al[0.48]As window layers. Use of the PC-1D computer code; Improvement of open circuit voltage and short circuit current; Disappearance of improvement in layers thicker than 100 nanometer.

  • p/n InP homojunction solar cells with a modified contacting scheme by liquid phase epitaxy. Choi, K. Y.; Shen, C. C. // Journal of Applied Physics;2/15/1988, Vol. 63 Issue 4, p1198 

    Discusses the fabrication and characterization of indium phosphide solar cells. Components of solar cell structure; Fabrication of indium phosphide solar cells; Analysis of the performance of indium phosphide solar cells.

  • Hydrogenation effects on n[sup +]-p InP solar cell. Suk-Ki Min; Won Chel Choi; Hoon Young Cho; Yamaguchi, M. // Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1280 

    Investigates the effect of hydrogenation on n[sup +]-p indium phosphide (InP) solar cell. Potential of InP solar cells for space applications; Mechanism for the hydrogen passivation effects; Factors attributing to the increase in solar cell efficiency and short circuit current.

  • Radiation response of heteroepitaxial n+p InP/Si solar cells. Walters, R.J.; Messenger, S.R.; Cotal, H. L.; Xapsos, M. A.; Wojtczuk, S. J.; Serreze, H. B.; Summers, G. P. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2164 

    Studies the effect of 1 MeV electron and 3 MeV proton irradiation on the performance of n+p indium phosphide (InP) solar cells grown heteroepitaxially on Si (InP/Si) substrates. Measurements of current versus voltage, capacitance versus voltage and quantum efficiency; Cell degradation under...

  • Mechanism for radiation resistance of InP solar cells. Yamaguchi, Masafumi; Ando, Koushi // Journal of Applied Physics;6/1/1988, Vol. 63 Issue 11, p5555 

    examines the photovoltaic properties of indium phosphide (InP) solar cells and defect behaviors of InP single crystals irradiated with 1-MeV electrons. Radiation resistance of InP solar cells; Radiation damage difference between silicon and III-IV compound solar cells; Details on the...

  • Concentration-dependent near and above band edge absorption in doped InP and its effect on solar cell modeling. Augustine, G.; Rohatgi, A.; Jokerst, N. M.; Dhere, R. // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2666 

    Presents a study that examined the absorption coefficients of indium-phosphorus (InP). Use of absorption coefficients of undoped InP; Improvement in the predicted internal quantum efficiency and device parameters of InP solar cells; Role of InP in optoelectronics and photovoltaic applications.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics