Si/Ge/S multilayer passivation of GaAs(100) for metal-insulator-semiconductor capacitors

Lu, Z.H.; Landheer, D.
March 1994
Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1702
Academic Journal
Describes the silicon/germanium/sulfur (S) multilayer passivation of gallium arsenide (GaAs)(100) for metal-insulator-semiconductor capacitors. Absence of Ga and As oxides on the GaAs surface; Preservation of the Ga-S-Ga bridge bond termination on the surface; Analysis of capacitors using high frequency capacitance-voltage measurements.


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