Temperature-dependent study of spin-dependent recombination at silicon dangling bonds

Vuillaume, D.; Deresmes, D.
March 1994
Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1690
Academic Journal
Evaluates the spin-dependent recombination of silicon dangling bonds. Determination of the behaviors of nonradiative capture processes; Relation between the temperature differences in the electrical detection of magnetic resonance (EDMR) measurements and the nonradiative capture processes; Influence of microscopic structures on EDMR temperature dependences.


Related Articles

  • Electrically detected magnetic resonance of a transition metal related recombination center in.... Rong, F.C.; Gerardi, G.J. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p610 

    Observes the presence of a transition metal related recombination center in silicon p-n diodes using an electrically detected magnetic resonance method. Characterization of paramagnetic defect center chemical signature by hyperfine structure; Association of platinum complex with recombination...

  • Noninvasive measurement of temperature distributions with high spatial resolution using quantitative imaging of NMR relaxation times. Doran, Simon J.; Carpenter, T. Adrian; Hall, Laurance D. // Review of Scientific Instruments;Jul1994, Vol. 65 Issue 7, p2231 

    The steady-state temperature distribution within a block of cis-polybutadiene has been mapped using quantitative magnetic resonance imaging. The experiment described makes use of the temperature dependence of the nuclear magnetic longitudinal relaxation time (T[sub 1]) of the polymer protons....

  • Temperature measurement at the end of a cantilever using oxygen paramagnetism in solid air. Thurber, Kent R.; Harrell, Lee E.; Smith, Doran D. // Journal of Applied Physics;4/1/2003, Vol. 93 Issue 7, p4297 

    We demonstrate temperature measurement of a sample attached to the end of a cantilever using cantilever magnetometry of solid air "contamination" of the sample surface. In experiments like our magnetic resonance force microscopy (MRFM), the sample is mounted at the end of a thin cantilever with...

  • Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials. Wang, X. J.; Puttisong, Y.; Tu, C. W.; Ptak, Aaron J.; Kalevich, V. K.; Egorov, A. Yu.; Geelhaar, L.; Riechert, H.; Chen, W. M.; Buyanova, I. A. // Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p241904 

    Optically detected magnetic resonance measurements are carried out to study formation of Ga interstitial-related defects in Ga(In)NAs alloys. The defects, which are among dominant nonradiative recombination centers that control carrier lifetime in Ga(In)NAs, are unambiguously proven to be common...

  • Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors. Cochrane, C. J.; Lenahan, P. M.; Lelis, A. J. // Journal of Applied Physics;Mar2009, Vol. 105 Issue 6, p064502 

    We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC through magnetic resonance measurements in bipolar junction transistors using spin dependent recombination (SDR). The SDR spectrum has nine distinguishable lines;...

  • Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect. Aichinger, Thomas; Lenahan, Patrick M. // Applied Physics Letters;8/20/2012, Vol. 101 Issue 8, p083504 

    We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most...

  • Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires. Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Kuang, Y. J.; Sukrittanon, S.; Tu, C. W.; Chen, W. M.; Buyanova, I. A. // Applied Physics Letters;10/15/2012, Vol. 101 Issue 16, p163106 

    Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior...

  • PTB-96: The Ultra-Low Temperature Scale of PTB. Felimuth, B.; Hechtfischer, D.; Hoffmann, A. // AIP Conference Proceedings;2003, Vol. 684 Issue 1, p71 

    The temperature scale PTB-96 for the range from 0.9 mK to 1 K is one of the melting-pressure scales, on which the Provisional Low Temperature Scale of 2000, PLTS-2000, is based. The construction and the thermodynamic significance of the PTB-96 are discussed in detail considering the now...

  • The Quality of the Curie Law in Platinum-NMR. Hechtfischer, D.; Schuster, G. // AIP Conference Proceedings;2003, Vol. 684 Issue 1, p47 

    The construction of the temperature scale PTB-96 below 15 mK relies on platinum NMR thermometry. The quality of the Curie law for pure platinum metal and the limitations set by magnetic impurities are discussed. The solution found to overcome the resulting difficulties is described, and an...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics