New microfabrication technique by synchrotron radiation-excited etching: Use of noncontact mask

Terakado, Shingo; Goto, Takashi
March 1994
Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1659
Academic Journal
Investigates the synchrotron radiation (SR)-excited etching using noncontact mask on a submicrometer scale. Replication of the noncontact mask on the etched surface; Obtainment of the area-selective etching; Determination of the depth profile of the etched part through the photointensity distribution of SR.


Related Articles

  • Synchrotron radiation-excited etching of W, Ta, and their oxide films. Terakado, Shingo; Kaneda, Kazuhiro // Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p1045 

    Details the synchrotron radiation-(SR-)excited etching of tungsten, tantalum, and their oxide films. Selectivity of photoexcited etching on radiated region; Effects of reactive species on etching; Examination of the role of SR on etching through surface photochemical reaction.

  • Synchrotron-radiation-induced anisotropic wet etching of GaAs. Qing Ma; Mancini, Derrick C. // Applied Physics Letters;10/11/1999, Vol. 75 Issue 15, p2274 

    Studies a room-temperature photoenhanced chemical wet etching process for n-type GaAs using x-rays from a synchrotron radiation source. Etching solution used; Characteristics of the etched surfaced produced by the process; Dependence of the etching rate on x-ray intensity and energy, solution...

  • Material selectivity in synchrotron radiation-stimulated etching of SiO2 and Si. Takahashi, Jun-ichi; Utsumi, Yuichi; Urisu, Tsuneo // Journal of Applied Physics;9/15/1991, Vol. 70 Issue 6, p2958 

    Reports on the material selectivity in synchrotron radiation-stimulated etching of silicon dioxide and silicon. Rate differences in synchrotron radiation (SR)-stimulated etching among several kinds of silicon dioxide and silicon materials; Impact of impurity doping into polycrystalline silicon;...

  • Photochemical etching of silicon using monochromatic synchrotron radiation. Kitamura, Osamu; Terakado, Shingo // Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p192 

    Examines the photochemical etching of single-crystal silicon using monochromatic synchrotron radiation. Comparison of the increases of the irradiation-induced etched depth to the total electron yield spectra; Agreement of the increment and the total electron yield of silicon (Si) ratios;...

  • SEMICON West's lively lithography. M.D.L. // Solid State Technology;Sep2002, Vol. 45 Issue 9, p30 

    Describes an Advanced Patterning Film (APF), a removable hardmask that allows less robust 193nm resists to successfully pattern sub-50nm transistor gates. Use of fluorine dry etching to transfer the pattern to the silicon oxynitride layer; Aerial image metrology system tools; Development of low...

  • Low-temperature synchrotron-radiation-excited etching of silicon dioxide with sulfur hexafluoride adsorption. Ogawa, Taro; Mochiji, Kozo; Ochiai, Isao; Yamamoto, Seiji; Tanaka, Kenichiro // Journal of Applied Physics;5/1/1994, Vol. 75 Issue 9, p4680 

    Deals with a study which examined synchrotron-radiation-excited etching of silicon oxide and silicon from the viewpoints of pattern replicability and analysis of etching selectivity between two layers. Methods; Results; Discussion.

  • High-rate, anisotropic dry etching of InP in HI-based discharges. Pearton, S.J.; Chakrabarti, U.K. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p838 

    Describes the anisotropic dry etching of indium phosphide (InP) in hydrogen iodide-based discharges. Display of high selectivities for InP dry etching; Demonstration of reactive ion beam etching; Influence of practical etch rates on the erosion in photoresist and silicon dioxide masks.

  • Plasma etch rates: The impact of mask transmittance. Pindo, Massimiliano // Solid State Technology;Aug2001, Vol. 44 Issue 8, p55 

    Discusses the impact of mask characteristics on plasma-etching performance when endpoint detection is used. Application of plasma systems with endpoint detection to polysilicon and metal etching; Discussion on mask transmittance and macroloading; Repetition of exposure fields on a semiconductor...

  • Reactive ion etching of high-aspect-ratio 100 nm linewidth features in tungsten. Chu, W.; Foster, K.W. // Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2172 

    Examines the reactive ion etching of tungsten absorbers for x-ray masks. Details on the thermal stability of tungsten; Addition of fluorocarbons to the etch mixtures; Passivation of sidewalls during the venting process; Mechanism for detecting the end point of the etch process.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics