Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient

Nordell, N.; Nishino, S.
March 1994
Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1647
Academic Journal
Investigates the growth of silicon carbide using hexamethyldisilane in a hydrogen-poor ambient. Obtainment of polycrystalline layers at low growth temperatures; Improvement of crystallinity at high temperatures; Orientation of the grains with respect to the surfaces.


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