TITLE

Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient

AUTHOR(S)
Nordell, N.; Nishino, S.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1647
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the growth of silicon carbide using hexamethyldisilane in a hydrogen-poor ambient. Obtainment of polycrystalline layers at low growth temperatures; Improvement of crystallinity at high temperatures; Orientation of the grains with respect to the surfaces.
ACCESSION #
4266591

 

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