TITLE

Diffusion length of Ga adatoms o GaAs (111) surface in the ...19 x ...19 reconstruction growth

AUTHOR(S)
Yang, K.; Schowalter, L.J.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1641
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Calculates the diffusion length of gallium adatoms on gallium arsenide (GaAs) substrates in a growth regime. Influence of surface mobility on the facet formation of GaAs films; Use of the atomic force microscope to evaluate facet morphologies; Implications of the diffusion length for GaAs surfaces.
ACCESSION #
4266589

 

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