Optical anisotropy in wire-geometry SiGe layers grown by gas-source selective epitaxial growth

Usami, N.; Mine, T.
February 1994
Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1126
Academic Journal
Investigates the fabrication of silicon germanide (SiGe) quantum wire structures by gas-source selective epitaxial growth (SEG) technique. Properties of Si-based heterostructures; Ways to clarify the specific properties brought by wire geometry; Importance of SEG in the formation of SiGe layer with reduced dimension.


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