TITLE

High-performance Zn-doped-base InP/InGaAs double-heterojunction bipolar transistors grown by

AUTHOR(S)
Kurishima, K.; Nakajima, H.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines high performance zinc (Zn)-doped-base indium phosphide (InP)/In gallium arsenide (GaAs) double-heterojunction bipolar transistors (DHBT) grown by metalorganic vapor phase epitaxy. Prerequisite for high-performance HBT; Growth of the InP/InGaAs DHBT; Characteristic of the microwave performance of the DHBT.
ACCESSION #
4266555

 

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