Surface resistance and penetration depth of YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin films on

Jaekel, Christian; Waschke, Christian
June 1994
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3326
Academic Journal
Examines the surface resistance and penetration depth of YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin films on silicon at ultrahigh frequencies. Dependence of surface resistance on film thickness; Association of weak links with microstructure formation; Range of the critical film thickness.


Related Articles

  • Microstructures of YBa2Cu3O7-x superconducting thin films grown on a SrTiO3(100) substrate. Chen, C. H.; Kwo, J.; Hong, M. // Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p841 

    We report microstructures of superconducting YBa2Cu3O7-x thin films epitaxially grown on a SrTiO3(100) substrate. Transmission electron microscopy studies reveal epitaxial, highly ordered grains ∼5000 Å in size for both types of films with either the a or c axis perpendicular to the...

  • Crystallization behavior of sol-gel derived Pb(Zr,Ti)O[sub 3] thin films and the polarization.... Amanuma, Kazushi; Hase, Takashi // Applied Physics Letters;12/12/1994, Vol. 65 Issue 24, p3140 

    Examines the microstructure of sol-gel derived Pb(Zr,Ti)O[sub 3] thin films. Use of Auger electron spectroscopy and transmission electron microscopy; Depth profile of the material resulting from crystallization into perovskite phase; Interface characteristics after 10[sub 8] polarization...

  • Microstructure evolution induced by scanned laser annealing in Al interconnects. Hau-Riege, C.S.; Thompson, C.V. // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1464 

    Describes a method developed for inducing controlled microstructural evolution in thin films patterned into lines using scanned laser annealing. Types of microstructures resulting from scanned laser annealing.

  • Transition from lateral to transverse phase separation during film co-deposition. Adams, C.D.; Atzmon, M.; Cheng, Y.-T.; Srolovitz, D.J. // Applied Physics Letters;11/11/1991, Vol. 59 Issue 20, p2535 

    Investigates distinct types of phase-separated microstructures in co-deposited aluminum-germanium films. Observation of lateral phase separation; Components of the microstructures; Kinetics of the phase separation process.

  • Structural investigation of aromatic polyimide films modified by ion beams: A comparative study. Dong Xu; Xinglong Xu; Shichang Zou // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3110 

    Investigates the structure of modified polyimide films irradiated with boron ion beams. Use of Raman spectroscopy and X-ray photoelectron; Formation of graphite bonding; Effect of dose and beam current density on the microstructure.

  • Growth of high quality amorphous silicon films with significantly improved stability. Dalal, Vikram L.; Ping, E.X. // Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1862 

    Examines the improved stability of amorphous silicon (a-Si:H) films. Effects of boron on the microstructure of a-Si:H; Production of high quality films by low hydrogen concentration; Need for excessive Si--H bonding to achieve stable a-Si:H film.

  • Microstructural evolution of Al-Cu thin-film conducting lines during post-pattern annealing. Kang, S.H.; Morris Jr., J.W. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p196 

    Presents a statistical analysis of the evolution of polygranular segment lengths during high-temperature annealing of Al(Cu) thin-film interconnects with quasi-bamboo microstructures. Preparation of the samples; Microstructural modification by post-pattern annealing; Distribution of longest...

  • Off-axis electron holography of epitaxial FePt films. McCartney, M.R.; Smith, David J.; Farrow, R. F. C.; Marks, R. F. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2461 

    Investigate the magnetic microstructure of thin epitaxial FexPt1-x ordered alloy thin films using off-axis electron holography at the nanometer level. Defective areas associated with local perturbations of the in-plane magnetic field; Variations in phase shifts in the vacuum.

  • The improved stability of hydrogenated amorphous silicon films grown by reactive magnetron sputtering at high substrate temperature. Liang, Y. H.; Maley, N.; Abelson, J. R. // Journal of Applied Physics;4/1/1994, Vol. 75 Issue 7, p3704 

    Presents a study which described the electronic properties, stability and microstructure of a-Si:H films grown at high substrate temperature by direct current reactive magnetron sputtering. Background on the sample materials; Methodology; Results.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics