Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs

Hwang, J.S.; Tyan, S.L.
June 1994
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3314
Academic Journal
Presents the photoreflectance study of a Fermi level in molecular beam epitaxial grown indium aluminum arsenide heterostructures. Implication of aluminum concentration for surface Fermi level at midgap; Use of Franz-Keldysh oscillations for built-in electric field determination; Details on the doping concentration in the buffer layer and growth temperature.


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