TITLE

Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs

AUTHOR(S)
Hwang, J.S.; Tyan, S.L.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3314
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the photoreflectance study of a Fermi level in molecular beam epitaxial grown indium aluminum arsenide heterostructures. Implication of aluminum concentration for surface Fermi level at midgap; Use of Franz-Keldysh oscillations for built-in electric field determination; Details on the doping concentration in the buffer layer and growth temperature.
ACCESSION #
4266524

 

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