TITLE

Eliminating dopant diffusion after ion implantation by surface etching

AUTHOR(S)
Lee, Cynthia C.; Deal, Michael D.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the role implantation damage in dopant diffusion. Modification of the point defect damage profile; Absence of silicon diffusion after thermal annealing; Prediction of TRIM simulations for gallium vacancy surface layer and interstitials.
ACCESSION #
4266520

 

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