Growth of GaAs/AlAs trench-buried multiple quantum wires by metalorganic chemical vapor

Sogawa, T.; Ando, S.
June 1994
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3299
Academic Journal
Examines the growth of gallium arsenide/aluminum arsenide trench-buried quantum wires (TBW) by metalorganic chemical vapor deposition on V-grooved substrates. Dependence of V-shapes on growth temperatures and group V/III ratio; Range of temperature used in the study; Formation of vertically stacked double TBW using 30 nanometer wide trenches.


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