TITLE

Observation of a negative electron affinity for heteroepitaxial AlN on alpha(6H)-SiC(0001)

AUTHOR(S)
Benjamin, M.C.; Cheng Wang
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3288
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the presence of a negative electron affinity surface on aluminum nitride (AlN) semiconductors. Growth of heteroepitaxial AlN on hydrogenated amorphous silicon carbide (SiC) substrates; Characterization of surface electronic states by ultraviolet photoemission; Presentation of possible band alignment between AlN and SiC.
ACCESSION #
4266515

 

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