Observation of a negative electron affinity for heteroepitaxial AlN on alpha(6H)-SiC(0001)

Benjamin, M.C.; Cheng Wang
June 1994
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3288
Academic Journal
Examines the presence of a negative electron affinity surface on aluminum nitride (AlN) semiconductors. Growth of heteroepitaxial AlN on hydrogenated amorphous silicon carbide (SiC) substrates; Characterization of surface electronic states by ultraviolet photoemission; Presentation of possible band alignment between AlN and SiC.


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