TITLE

Photoluminescence of Sm doped porous silicon--evidence for light emission through luminescence

AUTHOR(S)
Lin, J.; Zhang, L.Z.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3282
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the photoluminescence (PL) spectra of samarium (Sm) doped porous silicon (PS). Development of Sm-related luminescence centers within the oxide of PS; Occurrence of electron-hole pair photoexcitation in nanoscale silicon; Use of p-type silicon(111) wafer as an initial material.
ACCESSION #
4266513

 

Related Articles

  • Influence of physical and chemical surface treatment on the photoluminescence of porous silicon. Maronchuk, I. E.; Naidenkov, M. N.; Naidenkova, M. V.; Sarikov, A. V.; Voloshina, T. L. // Technical Physics;Jan99, Vol. 44 Issue 1, p122 

    It is shown that surface treatment of porous silicon in inorganic acids and solutions of metal chlorides leads to an increase in the intensity of photoluminescence of this material. In the case of chlorides, a short-wavelength shift of the photoluminescence maximum is also observed. The effect...

  • Reversible and irreversible changes in the photoluminescence spectra of porous silicon held in water. Dzhumaev, B. R. // Semiconductors;Nov99, Vol. 33 Issue 11, p1247 

    The change induced in the photoluminescence spectra and photoluminescence excitation spectra by holding porous silicon in water is investigated. It is found that submerging a sample in water gives rise simultaneously to reversible and irreversible changes in the intensity and position of the...

  • Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures. Venger, E. F.; Kaganovich, �. B.; Kirillova, S. I.; Manoilov, �. G.; Primachenko, V. E.; Svechnikov, S. V. // Semiconductors;Nov99, Vol. 33 Issue 11, p1202 

    Structures based on porous silicon por-Si/p-Si, both freshly prepared by chemical etching and aged, exhibit a temperature-dependent photovoltage at high levels of electron-hole pair generation by pulse trains of red and white light. These structures are investigated by measuring this...

  • Observation of persistent photoluminescence in porous silicon: Evidence of surface emission. Fan, J. C.; Chen, C. H.; Chen, Y. F. // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    We report on the observation of persistent photoluminescence (PPL) in oxidized porous silicon. The PPL decay can be well described by a stretched-exponential function, and its decay rate is not sensitive to the change of temperature. We point out that the PPL behavior can be interpreted in terms...

  • Two sources of excitation of photoluminescence of porous silicon. Korsunskaya, N. E.; Torchinskaya, T. V.; Dzhumaev, B. R.; Khomenkova, L. Yu.; Bulakh, B. M. // Semiconductors;Aug97, Vol. 31 Issue 8, p773 

    The change occurring in the photoluminescence spectra and the photoluminescence excitation spectra during aging of porous-silicon samples in air and in vacuum has been investigated. It was found that the character of the photoluminescence changes occurring during aging depends on the wavelength...

  • Photoinduced luminescence enhancement from anodically oxidized porous Si. Shih, S.; Jung, K.H. // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3306 

    Investigates the photoinduced luminescence in anodically oxidized porous silicon. Adsorption of oxygen without hydrogen loss during laser illumination; Relationship between photoluminescence (PL) intensity, dangling bond density and illumination time; Use of Fourier-transform infrared and PL...

  • Luminescent characteristics of a novel porous silicon structure formed in a nonaqueous electrolyte. Propst, Eric K.; Rieger, Melissa M. // Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1914 

    Examines the luminescent characteristics of a porous silicon structure formed in nonaqueous electrolyte. Composition of the porous silicon; Effect of silicon photoluminescence on the optoelectronic integration of silicon devices; Influence of dopant-type, concentration and anodization potential...

  • Photoluminescence spectrum redshifting of porous silicon by a polymeric carbon layer. Teschke, O.; Galembeck, F. // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3590 

    Examines the photoluminescence spectrum redshifting of porous silicon by a polymeric carbon layer. Indications of the high-resolution electron energy loss spectroscopy; Ways to minimize the hydrolysis and oxidation of porous silicon; Structural connection between the surface grafted alkyl...

  • Ultraviolet photoluminescence from nonbridging oxygen hole centers in porous silica. Yao, Baodian; Shi, Huazhong; Zhang, Xinyi; Zhang, Lide // Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p174 

    In this letter, we report the observation of an ultraviolet (UV) photoluminescence (PL) emission at around 330 nm in porous silica prepared by the sol-gel process. Upon a posttreatment which leads to OH adsorption, the intensity of the observed UV PL emission increases significantly. It is shown...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics