TITLE

Temperature and carrier density dependence of mobility in a heavily doped quantum well

AUTHOR(S)
Somerville, Mark H.; Greenberg, David R.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3276
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the study of electron mobility as a function of sheet carrier concentration and temperature in a doped quantum well system. Relationship between electron mobility and electron-impurity concentration ratio; Dependence of electron mobility at low temperatures; Implication of electron density for suppressing the ionized impurity scattering.
ACCESSION #
4266511

 

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