TITLE

Oxidation enhanced dopant diffusion in separation by implantation by oxygen silicon-on-insulator

AUTHOR(S)
Crowder, S.W.; Griffin, P.B.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3264
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the oxidation-enhanced dopant diffusion in separation by implantation of oxygen (SIMOX) silicon-on-insulator material. Comparison between the recombination velocity at SIMOX and silica interface; Dependence of recombination velocity on material formation conditions; Correlation between recombination velocity and surface interfacial area.
ACCESSION #
4266507

 

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