Oxidation enhanced dopant diffusion in separation by implantation by oxygen silicon-on-insulator

Crowder, S.W.; Griffin, P.B.
June 1994
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3264
Academic Journal
Examines the oxidation-enhanced dopant diffusion in separation by implantation of oxygen (SIMOX) silicon-on-insulator material. Comparison between the recombination velocity at SIMOX and silica interface; Dependence of recombination velocity on material formation conditions; Correlation between recombination velocity and surface interfacial area.


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