TITLE

Importance of collector doping in the design of AlInAs/GaInAs/InP double heterojunction bipolar

AUTHOR(S)
Hafizi, M.; Liu, T.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3261
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the importance of collector doping for double heterojunction bipolar transistors design. Sensitivity of direct current and radio frequency performance to collector doping level; Base-collector and collector-emitter breakdown voltages in 65-70 gigahertz range; Occurrence of conduction band potential barrier at the base-collector interface.
ACCESSION #
4266506

 

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