Importance of collector doping in the design of AlInAs/GaInAs/InP double heterojunction bipolar

Hafizi, M.; Liu, T.
June 1994
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3261
Academic Journal
Examines the importance of collector doping for double heterojunction bipolar transistors design. Sensitivity of direct current and radio frequency performance to collector doping level; Base-collector and collector-emitter breakdown voltages in 65-70 gigahertz range; Occurrence of conduction band potential barrier at the base-collector interface.


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