TITLE

Electron distribution in a periodically line-doped GaAs

AUTHOR(S)
Takagaki, Y.; Friedland, K.J.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3258
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Calculates the electrostatic potential and electron distribution in periodically wirelike silicon-doped gallium arsenide. Significance of mutual coupling between channels for wire separations; Existence of one-dimensional bound state; Indication of electron distribution modulation for two-dimensional states.
ACCESSION #
4266505

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics