Read-only optical disk with superresolution

Yihong Wu; Hock Khoo
June 1994
Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3225
Academic Journal
Examines the operation of read-only optical disk system with superresolution. Addition of a semiconductor masking layer with proper band gap; Approximation of absorption coefficient of the semiconductor materials near the band edge; Attainment of superresolution at lower temperatures.


Related Articles

  • Nonlinear optical determination of the energy gap of Hg1-xCdxTe using two-photon absorption techniques. Seiler, D. G.; McClure, S. W.; Justice, R. J.; Loloee, M. R.; Nelson, D. A. // Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1159 

    The energy band gap of Hg1-xCdxTe has been determined for the first time using two-photon absorption techniques with CO2 lasers for samples with x≊0.32.

  • Band parameters for nitrogen-containing semiconductors. Vurgaftman, I.; Meyer, J.R. // Journal of Applied Physics;9/15/2003, Vol. 94 Issue 6, p3675 

    Presents a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date. Main classes; Tabulation of the direct and indirect energy gaps, spin-orbit and crystal-field splittings; Use of the band...

  • Band-gap engineering in periodic elastic composites. Kushwaha, M.S.; Halevi, P. // Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1085 

    Examines the band-gap engineering in periodic elastic composites. Size of the band gap in semiconductors; Dependence of the gap widths on the filling fraction; Existence of full gaps in the phononic crystals.

  • Effective band-gap shrinkage in GaAs. Harmon, E.S.; Melloch, M.R.; Lundstrom, M.S. // Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p502 

    Demonstrates the effective band-gap shrinkage from measurements on heavily doped gallium arsenide (GaAs). Convulsion on the collector current-voltage characteristic of a homojunction bipolar transistor; Band-gap shrinkage in heavily doped p-GaAs; Observation of an effective band-gap widening at...

  • Electron-wave quarter-wavelength quantum well impedance transformers between differing energy-gap semiconductors. Gaylord, T. K.; Glytsis, E. N.; Brennan, K. F. // Journal of Applied Physics;3/1/1990, Vol. 67 Issue 5, p2623 

    Focuses on a study which designed impedance transformers for ballistic electron waves traveling between dissimilar energy-gap semiconductors as a series of quarter wavelength layers in the form of a compositional superlattice. Quantitative analogies between electromagnetic-wave propagation in...

  • Correlation between the band gap of semiconductors and thermal activation parameters of plasticity. Siethoff, H. // Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p174 

    Examines the link between the band gap of semiconductors and thermal activation parameters of plasticity. Distinction of silicon and germanium with the III-V compounds; Role of the emission and absorption of point defects on semiconductor mobility; Plausible involvement of an elementary...

  • Predicted band gap of the new semiconductor SiGeSn. Soref, Richard A.; Perry, Clive H. // Journal of Applied Physics;1/1/1991, Vol. 69 Issue 1, p539 

    Presents a study which calculated the direct and indirect band gaps of the new ternary semiconductor SiGeSn. Estimate of the optical indices of refraction of SiGeSn; Plot of energy gap as a function of lattice constant for the compound semiconductors; Effect of the coherent strain in germanium...

  • Manifestation of Coulomb Gap in Two-Dimensional p-GaAs�AlGaAs Structures with Filled Upper Hubbard Band. Agrinskaya, N. V.; Kozub, V. I.; Ustinov, V. M.; Chernyaev, A. V.; Shamshur, D. V. // JETP Letters;9/25/2002, Vol. 76 Issue 6, p360 

    The transport properties of multilayer GaAs/A1GaAs structures doped modulationally with Be so as to fill, in equilibrium, the states of upper Hubbard band (A[sup +] centers) with holes were studied. For the concentration of dopants on the order of 5 � 10[sup 11] cm[sup -2], the hopping...

  • Current gain reduction by 0.45 eV oxygen related level in graded band-gap AlGaAs base-emitter of.... Watanabe, Kazuo; Yamazaki, Hajime; Wada, Kazumi // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3407 

    Examines the effective electrical recombination center in heterojunction bipolar transistors with a graded band-gap AlGaAs emitter-base junction. Reduction of current gain of heterojunction bipolar transistor; Origin of the recombination centers; Measurements of the oxygen atom concentration.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics