Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition

Mazzola, Michael S.; Saddow, Stephen E.
May 1994
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2730
Academic Journal
Observes D-center in 6 hexagonal-silicon carbide p-n diodes grown by chemical vapor deposition (CVD). Importance of electrically active deep levels in electronic-grade silicon carbide materials for optoelectronic devices; Preparation of electrical characterization; Concentration of the carbon precursor during CVD growth of the epitaxial layer.


Related Articles

  • Fabrication and properties of polycrystalline-SiC/Si structures for Si heterojunction devices. Chaudhry, M.I.; Wright, R.L. // Applied Physics Letters;7/1/1991, Vol. 59 Issue 1, p51 

    Examines the properties of polycrystalline silicon carbide/silicon (SiC) heterojunction diodes fabricated by chemical vapor deposition. Evidence for rectification with low leakage current; Process for increasing the quantum and conversion efficiency of the diodes; Comparison between the band...

  • Characteristics of InGaN multi-quantum-well-structure laser diodes. Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi; Iwasa, Naruhito; Yamada, Takao; Matsushita, Toshio; Kiyoku, Hiroyuki; Sugimoto, Yasunobu // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3269 

    Examines the growth of InGaN multi-quantum-well structure laser diodes by metalorganic chemical vapor deposition. Composition of the laser; Observation on the stimulated emission; Determination of the beam full widths at half power for the far-field radiation patterns.

  • Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors. YOKOTA, M.; YASUDA, K.; NIRAULA, M.; NAKAMURA, K.; OHASHI, H.; TANAKA, R.; OMURA, M.; MINOURA, S.; SHINGU, I.; AGATA, Y. // Journal of Electronic Materials;Sep2008, Vol. 37 Issue 9, p1391 

    We report on the growth of very thick (>260 µm) high-crystalline-quality single-crystal CdTe epitaxial films on (211) Si substrates in a metalorganic vapor-phase epitaxy reactor, and the development of gamma ray detectors and their radiation detection properties. Films were grown with a high...

  • InAsSbP/InAsSb/InAs laser diodes (lambda=3.2 mum) grown by low-pressure metal-organic.... Diaz, J.; Yi, H. // Applied Physics Letters;1/6/1997, Vol. 70 Issue 1, p40 

    Focuses on the diode lasers grown by low-pressure metal-organic chemical-vapor deposition. Value of the threshold current density of the laser; Derivation of output powers as high as 260 milliWatts; Absence of a nonradiative recombination mechanism for the lasers at 77 Kelvin.

  • Ultralow dark current Ge/Si(100) photodiodes with low thermal budget. Osmond, J.; Isella, G.; Chrastina, D.; Kaufmann, R.; Acciarri, M.; von Känel, H. // Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p201106 

    Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the...

  • Low-temperature (77-300 K) current-voltage characteristics of 4 H-SiC p- p- n diodes: Effect of impurity breakdown in the p-type base. Ivanov, P.; Potapov, A.; Samsonova, T. // Semiconductors;Apr2012, Vol. 46 Issue 4, p532 

    The effect of impurity breakdown on the low-temperature (77-300 K) current-voltage ( I-V) characteristics of 4 H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial p- p- n 4 H-SiC structures. A high electric...

  • High-power laser diodes (λ = 808—850 nm) based on asymmetric separate-confinement heterostructures. Andreev, A. Yu.; Leshko, A. Yu.; Lyutetskiĭ, A. V.; Marmalyuk, A. A.; Nalyot, T. A.; Padalitsa, A. A.; Pikhtin, N. A.; Sabitov, D. R.; Simakov, V. A.; Slipchenko, S. O.; Khomylev, M. A.; Tarasov, I. S. // Semiconductors;May2006, Vol. 40 Issue 5, p611 

    Symmetric and asymmetric separate-confinement AlGaAs/GaAs heterostructures have been grown by MOCVD in accordance with the concept of design of high-power semiconductor lasers. High-power laser diodes with a 100-µm aperture, emitting in the 808–850-nm range, were fabricated from these...

  • Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer. Tae-Young Park; Yong-Seok Choi; Jang-Won Kang; Jae-Ho Jeong; Seong-Ju Park; Dong Min Jeon; Je Won Kim; Yong Chun Kim // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p051124 

    Ga-doped ZnO (ZnO:Ga) films were grown by metalorganic chemical vapor deposition as transparent conducting layers for GaN light-emitting diodes (LEDs). The forward voltage of LEDs with ZnO:Ga was 3.3 V at 20 mA. The low forward voltage was attributed to the removal of a resistive ZnGa2O4 phase,...

  • Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature. Vashaei, Z.; Bayram, C.; Razeghi, M. // Journal of Applied Physics;Apr2010, Vol. 107 Issue 8, p083505 

    GaN/AlN resonant tunneling diodes (RTD) were grown by metal-organic chemical vapor deposition (MOCVD) and negative differential resistance with peak-to-valley ratios as high as 2.15 at room temperature was demonstrated. Effect of material quality on RTDs’ performance was investigated by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics