TITLE

Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition

AUTHOR(S)
Mazzola, Michael S.; Saddow, Stephen E.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2730
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Observes D-center in 6 hexagonal-silicon carbide p-n diodes grown by chemical vapor deposition (CVD). Importance of electrically active deep levels in electronic-grade silicon carbide materials for optoelectronic devices; Preparation of electrical characterization; Concentration of the carbon precursor during CVD growth of the epitaxial layer.
ACCESSION #
4266481

 

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