TITLE

Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)

AUTHOR(S)
Madhukar, A.; Xie, Q.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2727
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Observes the substrate temperature and arsenic pressure dependence of the density of indium arsenide three-dimensional (3D) islands formed on gallium arsenide(100). Mechanisms of the 3D island formation; Examination of the strain-dependent kinetic and thermodynamic aspects of the atomic processes; Nature of Moire fringes.
ACCESSION #
4266480

 

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