Hydrogenation of GaN, AlN, and InN

Zavada, J.M.; Wilson, R.G.
May 1994
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2724
Academic Journal
Measures the hydrogen incorporation depths in plasma-exposed gallium nitride (GaN) and aluminum nitride. Absence of redistribution of hydrogen for the annealing temperatures up to 800 degrees Celsius; Mensuration of high thermal stabilities for implanted [sup 2]H ions in GaN; Occurrence of unintentional hydrogen passivation during growth or processing.


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