Dielectric properties of electron-beam deposited Ga[sub 2]O[sub 3] films

Passlack, M.; Hunt, N.E.J.
May 1994
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2715
Academic Journal
Fabricates high quality, dielectric Ga[sub 2]O[sub 2] thin films. Deposition of the films with thickness between 40 and 4000 angstrom by electron-beam evaporation; Production of metal-insulator-semiconductor and metal-insulator-metal structures; Determination of the dielectric properties of the films.


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