TITLE

Influence of deposition pressure on the bulk and interface states in low pressure chemical

AUTHOR(S)
Dimitriadis, C.A.; Tassis, D.H.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2709
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effect of deposition pressure on the bulk and interface states of undoped low pressure chemical vapor deposited polycrystalline silicon thin-film transistors. Composition of the bulk states; Exhibition of exponential distribution by the interface states; Distribution of the bulk states within the forbidden energy gap.
ACCESSION #
4266474

 

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