TITLE

Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si

AUTHOR(S)
Nguyen, N.V.; Chandler-Horowitz, D.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2688
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Characterizes the interface region of silicon dioxide/silicon system by high-accuracy spectroscopic ellipsometry on multiple samples of different thicknesses. Determination of strain at the underlying silicon; Thickness of the microroughness region; Existence of the strain and microroughness at the interface of thermally grown silicon oxide films.
ACCESSION #
4266467

 

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