TITLE

GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy

AUTHOR(S)
Wen-Chau Liu; Der-Feng Guo
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2685
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a switching device with p-type delta-doped sheet in the center of an InGaAs-GaAs quantum well. Use of negative-differential-resistance switching device in the design of high speed switches; Demonstration of a schematic cross section of the device; Elevation of the barrier height near the anode side.
ACCESSION #
4266466

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics