TITLE

Growth of 2H-SiC on 6H-SiC by pulsed laser ablation

AUTHOR(S)
Stan, M.A.; Patton, M.O.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2667
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of 2hexagonal-silicon carbide (2H-SiC) thin film on a 6H-SiC substrate by pulsed laser ablation. Occurrence of the 2H-SiC film deposition in a high vacuum system; Measurement of the lattice parameters using plan-view and cross-sectional transmission electron microscopy; Description of the symmetry of the film.
ACCESSION #
4266460

 

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