Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy

Grandjean, N.; Massies, J.
May 1994
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2664
Academic Journal
Demonstrates the increase of the critical thickness for two-dimensional and three dimensional growth mode transition during the growth of GaInAs heterostructures. Corroboration of the experimental finding by a Monte Carlo simulation of the heteroepitaxial growth; Demonstration of improved quantum well optical properties.


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