In situ monitoring of electron cyclotron resonance plasma processing of GaAs surfaces by optical

Weegels, L.M.; Saitoh, T.
May 1994
Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2661
Academic Journal
Demonstrates the use of in situ reflection spectroscopy for monitoring the damage to the surface of gallium arsenide (GaAs) substrates. Induction of the damages by ions from an electron cyclotron plasma; Observation of differences in the reflectance spectra of GaAs substrates; Increase of the damage layer thickness in argon with the argon ion energy.


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