Surface structure of (NH[sub 4])[sub 2]S[sub x]-treated GaAs (100) in an atomic resolution

Yokoi, Naoki; Andoh, Hiroya
May 1994
Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2578
Academic Journal
Examines the three-dimensional structure of a gallium arsenide (100) surface treated in a (NH[sub 4])[sub 2]sulfur[sub x] solution. Suppression of oxidization of surface in the air; Observation of disorder of atomic sites in the surface region of a sulfur-terminated gallium arsenide; Measurement of sulfur layer thickness on gallium arsenide.


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