TITLE

Field effect in weakly compensated Si under condition of impurity conduction

AUTHOR(S)
Vedeneev, A.S.; Gaivoronskii, A.G.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2566
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the peculiarities of electron transport in a thin silicon:boron layer of p-channel depletion-type metal-oxide-semiconductor transistors. Manifestation of the peculiarities in helium temperature range; Division of ionized and neutral acceptors; Estimation of the hopping activation energy.
ACCESSION #
4266429

 

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