TITLE

Modulation of one-dimensional electron density in n-AlGaAs/GaAs edge quantum wire transistor

AUTHOR(S)
Nakamura, Y.; Tsuchiya, M.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2552
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the modulation of one-dimensional electron density in n-aluminum gallium arsenide/gallium arsenide edge quantum wire transistor. Preparation of the wires by molecular beam epitaxy; Demonstration of a field effect transistor action; Display of nonlinearity caused by the magnetic depopulation of one-dimensional subbands.
ACCESSION #
4266424

 

Related Articles

  • Observation of three-dimensional shell filling in cylindrical silicon nanowire single electron transistors. Cho, K. H.; Jung, Y. C.; Hong, B. H.; Hwang, S. W.; Oh, J. H.; Ahn, D.; Suk, S. D.; Yeo, K. H.; Kim, D.-W.; Park, D.; Lee, W.-S. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p182102 

    The authors have measured addition energy spectra from gate-all-around twin silicon nanowire single electron transistors (SETs) with the radius of 5 nm and with circular cross sections. Nonmonotonically varying addition energies are observed and the authors interpret them as shell fillings of...

  • Quantitative analysis of individual metal-CdSe-metal nanowire field-effect transistors. Skinner, Kwan; Dwyer, Chris; Washburn, Sean // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p112105 

    Heterostructured metal-CdSe-metal nanowires were fabricated by sequential electrochemical deposition of layers of Au and the semiconductor CdSe. Nonlinear I-V curves were observed, and a parameter retrieval model was used to extract the majority carrier mobility of 0.5 cm2 V-1 s-1 for nanowires...

  • Electron states in modulated nanowires. Lew Yan Voon, L. C.; Willatzen, M. // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p9997 

    A theory of electrons in modulated nanowires is presented. We show that these structures are radically different from plain nanowires and quantum-well structures in their electronic, optical, and transport properties. We find that thermionic emission experiments only measure an effective barrier...

  • Room-temperature Al single-electron transistor made by electron-beam lithography. Pashkin, Yu. A.; Nakamura, Y.; Tsai, J. S.; Tsai, J.S. // Applied Physics Letters;4/17/2000, Vol. 76 Issue 16 

    We present a lithographically made Al single-electron transistor that shows gate modulation at room temperature. The temperature dependence of the modulation agrees with the orthodox theory, however, energy-level quantization in a tiny metallic island affects the device characteristics below 30...

  • Crossatron-based modulator for high repetition rate operation with arbitrary pulse widths. Mathew, J. // Review of Scientific Instruments;Dec1994, Vol. 65 Issue 12, p3756 

    This article describes a Crossatron-based modulator for driving 10-1000 µs duration plasma discharges. The modulator has demonstrated burst mode operation at pulse repetition rates of 50 kHz. Insulated gate bipolar transistors (IGBTs) are used to trigger the Crossatron. The pulse width of...

  • Radial modulation doping in core-shell nanowires. Dillen, David C.; Kim, Kyounghwan; Liu, En-Shao; Tutuc, Emanuel // Nature Nanotechnology;Feb2014, Vol. 9 Issue 2, p116 

    Semiconductor nanowires are potential candidates for applications in quantum information processing, Josephson junctions and field-effect transistors and provide a unique test bed for low-dimensional physical phenomena. The ability to fabricate nanowire heterostructures with atomically flat,...

  • Current underestimation of the optical gap and Burstein-Moss shift in CdO thin films: A consequence of extended misuse of α2-versus-hν plots. Segura, A.; Sánchez-Royo, J. F.; García-Domene, B.; Almonacid, G. // Applied Physics Letters;10/10/2011, Vol. 99 Issue 15, p151907 

    This paper reports on the optical and transport properties of undoped and In-doped CdO films prepared by pulsed laser deposition. Film thickness (around 150 nm) was chosen to allow for an accurate measurement of the absorption coefficient spectrum up to 2-3 eV above the direct bandgap. The...

  • Modulation of carrier distributions in delta-doped quantum wells. Shih, Y.C.; Streetman, B.G. // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1344 

    Examines the modulation effect of carrier distributions in delta-doped quantum wells (QW). Factor affecting the carrier distributions for identical silicon or beryllium dopant distributions; Detection of QW thickness for maximum confinement; Observation of an extremely narrow...

  • Microwave intermodulation in thin film high-T[sub c] superconducting microstrip hairpin.... Willemsen, Balam A.; Dahm, T. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3898 

    Investigates the microwave intermodulation of superconducting hairpin resonators. Role of geometry in determining the intermodulation of resonators; Correlation between the intermodulation and losses in resonators; Reduction of the microwave intermodulation products of thin film resonators.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics