TITLE

Quantized conductance and electron focusing spectra of GaAs/AlGaAs point contacts fabricated by

AUTHOR(S)
Gao, J.R.; van Wees, B.J.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2529
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Details the fabrication of split-gate quantum double point contact device on two-dimensional electron gas of gallium arsenide/aluminum gallium arsenide heterostructures. Ranges of the typical opening split gates; Introduction of horn-shape constrictions; Attainment of electron focusing spectra for various point contact widths.
ACCESSION #
4266416

 

Related Articles

  • Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors. Kocan, M.; Umana-Membreno, G. A.; Chung, J. S.; Recht, F.; Mccarthy, L.; Keller, S.; Mishra, U. K.; Parish, G.; Nener, B. D. // Journal of Electronic Materials;Sep2007, Vol. 36 Issue 9, p1156 

    This paper reports results of a study of non-alloyed ohmic contacts on Si-implanted AlGaN/GaN heterostructures, obtained from current-voltage characteristics of transfer-length method (TLM) test structures. It is shown that the measured contact resistance from the Ti/Au/Ni metal contacts,...

  • Distinguishing impurity concentrations in GaAs and AlGaAs using very shallow undoped heterostructures. Mak, W. Y.; Das Gupta, K.; Beere, H. E.; Farrer, I.; Sfigakis, F.; Ritchie, D. A. // Applied Physics Letters;12/13/2010, Vol. 97 Issue 24, p242107 

    We have developed a method of fabricating very shallow, gateable, undoped two-dimensional electron gases (2DEG) and making very low resistivity contacts to these. We studied the evolution of mobility as a function of the depth of the 2DEG (from 310 to 30 nm). We extract quantitative information...

  • Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures. Gupta, K. Das; Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Ritchie, D. A. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p333 

    We have developed a method of fabricating very shallow, gateable, undoped 2-dimensional electron gases (2DEG) and making very low resistivity contacts to these. We studied the evolution of mobility as a function of the depth of the 2DEG (from 300 nm to 30 nm). We extract quantitative information...

  • Optical spectroscopy of two-dimensional electronic states in modulation-doped N-AlGaAs/GaAs heterostructures. Guk, A. V.; Kaminskii, V. �.; Mokerov, V. G.; Fedorov, Yu. V.; Khabarov, Yu. V. // Semiconductors;Nov97, Vol. 31 Issue 11, p1178 

    Photoluminescence spectra, associated with the two-dimensional electron gas in modulationdoped N-AlGaAs/GaAs heterostructures with different thicknesses d[sub s] of the undoped spacer layer, have been investigated at 77 K. All experimental samples possessed an undoped superlattice buffer layer...

  • Ballistic transport in one-dimensional constrictions formed in deep two-dimensional electron gases. Thomas, K.J.; Simmons, M.Y. // Applied Physics Letters;7/3/1995, Vol. 67 Issue 1, p109 

    Presents the high mobility two-dimensional electron gases (2DEG) formed at a depth of 2770 angstrom below the surface in GaAs/Al[sub 0.33]Ga[sub 0.67]As heterostructures. Creation of clean one-dimensional constrictions in deep 2DEG; Definition of split gates of varying widths; Effect of...

  • Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates. Redwing, J. M.; Tischler, M. A.; Flynn, J. S.; Elhamri, S.; Ahoujja, M.; Newrock, R. S.; Mitchel, W. C. // Applied Physics Letters;8/12/1996, Vol. 69 Issue 7, p963 

    High quality Al0.15Ga0.85N/GaN heterostructures have been fabricated on 6H–SiC and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A temperature independent mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80...

  • Two-dimensional electron gas density calculation in Ga0.47In0.53As/Al0.48In0.52As, Ga0.47In0.53As/InP, and Ga0.47In0.53As/InP/Al0.48In0.52As heterostructures. Yoon, K. S.; Stringfellow, G. B.; Huber, R. J. // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p5915 

    Presents information on a study which investigated the Ga[sub0.47]In[sub0.53]As/InP and Ga[sub0.47]In[sub0.53]As/Al[0.48]In[sub0.52]As systems in terms of two-dimensional electron gas densities formed at these heterostructures. Analytical method for calculation of two-dimensional electron gas...

  • Nanomachining of mesoscopic electronic devices using an atomic force microscope. Schumacher, H.W.; Keyser, U.F.; Zeitler, U.; Haug, R.J.; Ebert, K. // Applied Physics Letters;8/23/1999, Vol. 75 Issue 8, p1107 

    Studies the depletion of the two-dimensional electron gas of a GaAs/AlGaAs heterostructure using an atomic force microscope. Induction of depletion by repeated mechanical scribing of the surface layers; Room-temperature resistance across the scribed lines during fabrication; Low-temperature...

  • Andreev reflection at superconducting contacts to GaAs/AlGaAs heterostructures. Lenssen, K.-M.H.; Matters, M. // Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2079 

    Examines the development of superconducting contacts to two-dimensional electron gas in gallium arsenide (GaAs)/aluminum GaAs (AlGaAs) heterostructures for observing Andreev reflection. Use of tin to act as a sieve during annealing; Treatment of GaAs surface to obtain diffusion; Growth of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics