Two-dimensional arsenic precipitation by In delta doping during low temperature molecular beam

Cheng, T.M.; Chang, C.Y.
May 1994
Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2517
Academic Journal
Examines the two-dimensional arsenic precipitation by indium delta doping during low temperature molecular beam epitaxy growth of gallium arsenide or aluminum gallium arsenide. Role of interfacial energy difference in the accumulation and depletion of precipitates; Use of electronic or isoelectronic doping species in adjusting the interfacial energy.


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