TITLE

Low-field hole mobility of strained Si on (100) Si[sub 1-x]Ge[sub x] substrate

AUTHOR(S)
Nayak, Deepak K.; Sang Kook Chun
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2514
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the low-field hole mobility of strained silicon layers on (100)Si[sub 1-x]Ge[sub x] substrate. Inclusion of nonparabolicity and the warped nature of the valence band in the theory; Measurement of in-plane hole mobilities of the strained layers; Reason for the improvement in mobility results; Effect of p-type doping on mobility.
ACCESSION #
4266411

 

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