TITLE

GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical

AUTHOR(S)
Nagamune, Y.; Nishioka, M.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2495
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the in situ fabrication and photoluminescence spectra of gallium arsenide (GaAs) dot structures grown on (100) GaAs substrates. Use of selective epitaxial growth by metalorganic chemical vapor deposition; Lateral size of the dot structures; Enhancement of exciton binding energy due to lateral confinement.
ACCESSION #
4266404

 

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