2.7-3.9 mum InAsSb(P)/InAsSbP low threshold diode lasers

Baranov, A.N.; Imenkov, A.N.
May 1994
Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2480
Academic Journal
Examines lasing in the wavelength range of 2.7-3.9 micrometer in double heterostructure lasers with active region made of indium arsenide alloys. Growth of the devices by liquid-phase epitaxy; Measurement of the values of threshold current; Observation on the blue shift of lasing modes; Increase of the carrier density in the active region above threshold.


Related Articles

  • Small band gap bowing in In[sub 1-x]Ga[sub x]N alloys. Wu, J.; Walukiewicz, W.; Yu, K. M.; Ager, J. W.; Haller, E. E.; Lu, Hai; Schaff, William J. // Applied Physics Letters;6/24/2002, Vol. 80 Issue 25, p4741 

    High-quality wurtzite-structured In-rich In[sub 1-x]Ga[sub x]N films (0≤x≤0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the...

  • Natural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy. Hashizume, Tamotsu; Saitoh, Toshiya // Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2318 

    Chemical properties of natural oxides on air-exposed and chemically treated In[sub 0.49]Ga[sub 0.51]P surfaces grown by metalorganic vapor phase epitaxy were systematically investigated by x-ray photoelectron spectroscopy. An air-exposed sample exhibited a highly In-rich surface which included a...

  • Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy. Rawdanowicz, T. A.; Iyer, S.; Mitchel, W. C.; Saxler, A.; Elhamri, S. // Journal of Applied Physics;7/1/2002, Vol. 92 Issue 1, p296 

    We report on the electrical characteristics of InSb and n-type doping of InSb layers grown on GaAs substrates using a SnTe captive source by molecular beam epitaxy (MBE). The undoped epilayers are n-type in the temperature range of 10 to 300 K investigated. Doped layer with carrier...

  • Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm. Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J. // Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4038 

    Extremely low threshold-current-density In[SUB0.4]Ga[SUB0.6]As quantum-well (QW) lasers have been realized in the 1215-1233 nm wavelength regime. The measured room-temperature threshold current density of the InGaAs QW lasers with a cavity length of 1000 mm is only 90 A/cm[SUP2] at an emission...

  • Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties. Voronina, T. I.; Zhurtanov, B. E.; Lagunova, T. S.; Mikhailova, M. P.; Moiseev, K. D.; Rozov, A. E.; Yakovlev, Yu. P. // Semiconductors;Mar2001, Vol. 35 Issue 3, p331 

    Magnetotransport properties of the narrow-gap In[sub x]Ga[sub 1-x]As[sub y]Sb[sub 1-y]/GaSb heterojunctions grown by liquid-phase epitaxy with various In content in the solid solution (x=0.85-0.95 and E[sub g] = 0.4 eV) were studied. It is shown that, depending on the In content in these...

  • Refractive index of InGaAs/InAlAs multiquantum-well layers grown by molecular-beam epitaxy. Nojima, S.; Asahi, H. // Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p479 

    Examines the refractive index of indium alloys multiquantum-well layers grown by molecular-beam epitaxy. Potential applications of indium alloys multiquantum-well structures; Overview on the experiment; Refractive index of the indium alloys.

  • Anisotropic structural, electronic, and optical properties of InGaAs grown by a molecular beam.... Goldman, R.S.; Wieder, H.H. // Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1424 

    Investigates the structural, electronic, and optical properties of indium gallium arsenide grown by molecular beam epitaxy on misoriented substrates. Anisotropies in bulk strain relaxation; Identification of a polarization anisotropy in cathodoluminescence (CL) for epilayers; Execution of...

  • The physical origin of InAs quantum dots on GaAs(001). Bottomley, D. J. // Applied Physics Letters;2/16/1998, Vol. 72 Issue 7 

    We propose that large heteroepitaxial stress causes InAs to melt when deposited on GaAs(001) at approximately 770 K. This leads to mixing with the substrate in order to realize a local minimum in the Gibbs free energy of the liquid phase, producing an approximate liquid composition of In[sub...

  • Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular-beam epitaxy. Chiu, T. H.; Tsang, W. T.; Ditzenberger, J. A.; Chu, S. N. G.; van der Ziel, J. P. // Journal of Applied Physics;7/1/1986, Vol. 60 Issue 1, p205 

    Presents a study that described the growth conditions to achieve high-quality indium-arsenic-antimony (InAsSb) alloy and abrupt InAsSb/gallium-Sb heterostructure by molecular-beam epitaxy. Reliability of optical pyrometry in determining the growth temperature; Importance of a stable substrate...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics