Double-heterostructure diode lasers emitting at 3 mum with a metastable GaInAsSb active layer

Choi, H.K.; Eglash, S.J.
May 1994
Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2474
Academic Journal
Demonstrates double-heterostructure diode lasers emitting at 3 micrometer. Growth of the device by molecular beam epitaxy on gallium antimony substrates; Exhibition of pulsed operation at heatsink temperature; Observation of the reflection high-energy electron diffraction pattern in the growth.


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