Low-temperature silicon homoepitaxy by ultrahigh vacuum electron cyclotron resonance chemical

Heung-Sik Tae; Seok-Hee Hwang
February 1994
Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p1021
Academic Journal
Examines the growth of silicon (Si) epitaxial layers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition using SiH[sub 4]/H[sub 2] plasma. Role of substrate direct current (dc) bias on Si substrate; Suppression of Si damage with +10 voltage dc bias; Importance of ion energy control in low-temperature Si epitaxy.


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